Voltage-Controlled Spin Selection in a Magnetic Resonant Tunnelling DiodeReport as inadecuate



 Voltage-Controlled Spin Selection in a Magnetic Resonant Tunnelling Diode


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We have fabricated all II-VI semiconductor resonant tunneling diodes based on the Zn,Mn,BeSe material system, containing dilute magnetic material in the quantum well, and studied their current-voltage characteristics. When subjected to an external magnetic field the resulting spin splitting of the levels in the quantum well leads to a splitting of the transmission resonance into two separate peaks. This is interpreted as evidence of tunneling transport through spin polarized levels, and could be the first step towards a voltage controlled spin filter.



Author: A. Slobodskyy; C. Gould; T. Slobodskyy; C. R. Becker; G. Schmidt; L. W. Molenkamp

Source: https://archive.org/







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