Quantum Hall resistances of multiterminal top-gated graphene deviceReport as inadecuate



 Quantum Hall resistances of multiterminal top-gated graphene device


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Four-terminal resistances, both longitudinal and diagonal, of a locally gated graphene device are measured in the quantum-Hall QH regime. In sharp distinction from previous two-terminal studies J. R. Williams \textit{et al.}, Science {\bf 317}, 638 2007; B. \-{O}zyilmaz \textit{et al.}, Phys. Rev. Lett. {\bf 99}, 166804 2007, asymmetric QH resistances are observed, which provide information on reflection as well as transmission of the QH edge states. Most quantized values of resistances are well analyzed by the assumption that all edge states are equally populated. Contrary to the expectation, however, a 5-2 transmission of the edge states is also found, which may be caused by incomplete mode mixing and-or by the presence of counter-propagating edge states. This four-terminal scheme can be conveniently used to study the edge-state equilibration in locally gated graphene devices as well as mono- and multi-layer graphene hybrid structures.



Author: Dong-Keun Ki; Hu-Jong Lee

Source: https://archive.org/







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