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 Kondo effect in a semiconductor quantum dot coupled to ferromagnetic electrodes


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Using a laterally-fabricated quantum-dot QD spin-valve device, we experimentally study the Kondo effect in the electron transport through a semiconductor QD with an odd number of electrons N. In a parallel magnetic configuration of the ferromagnetic electrodes, the Kondo resonance at N = 3 splits clearly without external magnetic fields. With applying magnetic fields B, the splitting is gradually reduced, and then the Kondo effect is almost restored at B = 1.2 T. This means that, in the Kondo regime, an inverse effective magnetic field of B ~ 1.2 T can be applied to the QD in the parallel magnetic configuration of the ferromagnetic electrodes.



Author: K. Hamaya; M. Kitabatake; K. Shibata; M. Jung; M. Kawamura; K. Hirakawa; T. Machida; T. Taniyama; S. Ishida; Y. Arakawa

Source: https://archive.org/



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