High tunabilty Ba0.6Sr0.4TiO3 thin films fabricated on Pt–Si substrates with La0.5Sr0.5CoO3 buffer layerReport as inadecuate




High tunabilty Ba0.6Sr0.4TiO3 thin films fabricated on Pt–Si substrates with La0.5Sr0.5CoO3 buffer layer - Download this document for free, or read online. Document in PDF available to download.

Journal of Materials Science: Materials in Electronics

, Volume 19, Issue 5, pp 429–433

First Online: 18 July 2007Received: 07 April 2007Accepted: 19 June 2007

Abstract

Ba0.6Sr0.4TiO3 BST thin films for the tunable microwave devices were grown using pulsed laser deposition PLD on Pt-Ti-SiO2-Si Pt–Si substrates with La0.5Sr0.5CoO3 LSCO buffer layers. For comparison, the films were also grown on Pi-Si substrates. X-ray diffraction results showed that the BST films on Pt–Si displayed a highly 110 preferred orientation, while the films with the LSCO buffer layers were 100-oriented. Atomic force microscope AFM revealed that BST films with LSCO buffer layers had smoother surface and smaller grain size. Compared with 110 BST films, the 100 BST thin films had the higher tunability and the better figure of merit FOM. The dielectric constant, the dielectric loss and the tunability of the BST thin films on LSCO-Pt–Si substrates measured at 10 kHz were 1010, 0.031 and 82.4%, respectively. Additionally, the current–voltageI–V measurement indicated that the leakage current density of 100 BST thin films on LSCO-Pt-Si substrates was reduced compared with that of 110 BST thin films directly on Pt electrodes, due to the possible reduction of interface oxygen vacancies at BST-LSCO interface and smaller grain size of the films. The enhancement in dielectric properties may be attributed to 100 preferred orientation in the films.

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Author: W. F. Qin - J. Xiong - J. Zhu - J. L. Tang - W. J. Jie - X. H. Wei - Y. Zhang - Y. R. Li

Source: https://link.springer.com/



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