Investigation of Semiconductor Quantum Dots for Waveguide Electroabsorption ModulatorReport as inadecuate

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Nanoscale Research Letters

, 3:486

First Online: 21 October 2008Received: 27 July 2008Accepted: 02 October 2008


In this work, we investigated the use of 10-layer InAs quantum dot QD as active region of an electroabsorption modulator EAM. The QD-EAM is a p-i-n ridge waveguide structure with intrinsic layer thickness of 0.4 μm, width of 10 μm, and length of 1.0 mm. Photocurrent measurement reveals a Stark shift of ~5 meV ~7 nm at reverse bias of 3 V 75 kV-cm and broadening of the resonance peak due to field ionization of electrons and holes was observed for E-field larger than 25 kV-cm. Investigation at wavelength range of 1,300–1320 nm reveals that the largest absorption change occurs at 1317 nm. Optical transmission measurement at this wavelength shows insertion loss of ~8 dB, and extinction ratio of ~5 dB at reverse bias of 5 V. Consequently, methods to improve the performance of the QD-EAM are proposed. We believe that QDs are promising for EAM and the performance of QD-EAM will improve with increasing research efforts.

KeywordsInAs quantum dots Electroabsorption modulator Ridge waveguide structure Photocurrent Optical transmission  Download fulltext PDF

Author: CY Ngo - SF Yoon - WK Loke - Q Cao - DR Lim - Vincent Wong - YK Sim - SJ Chua



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