Temperature-dependent resistivity of ferromagnetic GaMnAs: Interplay between impurity scattering and many-body effects - Condensed Matter > Materials ScienceReport as inadecuate




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Abstract: The static conductivity of the dilute magnetic semiconductor GaMnAs iscalculated using the memory function formalism and time-dependentdensity-functional theory to account for impurity scattering and to treatHartree and exchange interactions within the hole gas. We find that the Coulombscattering off the charged impurities alone is not sufficient to explain theexperimentally observed drop in resistivity below the ferromagnetic transitiontemperature: the often overlooked scattering off the fluctuations of localizedspins is shown to play a significant role.



Author: F.V. Kyrychenko, C.A. Ullrich

Source: https://arxiv.org/







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