Advances in second order nonlinear effect in SiliconReport as inadecuate




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1 C2N - Centre de Nanosciences et de Nanotechnologies Orsay

Abstract : In this work, we present a theoretical model to determine the second order nonlinear coefficient under strain gradient in silicon. Furthermore, carrier effect due to applied electric field has also been taking into account to analyze the obtained experimental phase variation.





Author: P Damas - X Le Roux - M Berciano - G Marcaud - C Alonso-Ramos - D Benedikovic - E Cassan - D Marris-Morini - L Vivien -

Source: https://hal.archives-ouvertes.fr/



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