Room temperature ferromagnetic-like behavior in Mn-implanted and post-annealed InAs layers deposited by Molecular Beam Epitaxy - Condensed Matter > Materials ScienceReport as inadecuate




Room temperature ferromagnetic-like behavior in Mn-implanted and post-annealed InAs layers deposited by Molecular Beam Epitaxy - Condensed Matter > Materials Science - Download this document for free, or read online. Document in PDF available to download.

Abstract: We report on the magnetic and structural properties of Ar and Mn implantedInAs epitaxial films grown on GaAs 100 by Molecular Beam Epitaxy MBE andthe effect of Rapid Thermal Annealing RTA for 30 seconds at 750C. ChannelingParticle Induced X- ray Emission PIXE experiments reveal that after Mnimplantation almost all Mn atoms are subsbtitutional in the In-site of the InAslattice, like in a diluted magnetic semiconductor DMS. All of these samplesshow diamagnetic behavior. But, after RTA treatment the Mn-InAs films exhibitroom-temperature magnetism. According to PIXE measurements the Mn atoms are nolonger substitutional. When the same set of experiments were performed with Asas implantation ion all of the layers present diamagnetism without exception.This indicates that the appearance of room-temperature ferromagnetic-likebehavior in the Mn-InAs-RTA layer is not related to lattice disorder produceduring implantation, but to a Mn reaction produced after a short thermaltreatment. X-ray diffraction patterns XRD and Rutherford Back ScatteringRBS measurements evidence the segregation of an oxygen deficient-MnO2 phasenominally MnO1.94 in the Mn-InAs-RTA epitaxial layers which might be on theorigin of room temperature ferromagnetic-like response observed.



Author: R. Gonzalez-Arrabal, Y. Gonzalez, L. Gonzalez, M. Garcia-Hernandez, F. Munnik, M. S. Martin-Gonzalez

Source: https://arxiv.org/







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