Quantitative calculations of charge carrier densities in the depletion layers at YBa2Cu3O7-x interfaces - Condensed Matter > Materials ScienceReport as inadecuate




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Abstract: Charge redistribution at high-Tc superconductor interfaces and grainboundaries on the one hand is problematic for technological application. On theother hand, it gives rise to a great perspective for tailoring the localelectronic states. For prototypical metallic interfaces, we derivequantitative results for the intrinsic doping of the CuO2-planes, i.e. for thedeviation of the charge carrier density from the bulk value. Our data are basedon ab-initio supercell calculations within density functional theory. Aremarkable hole-underdoping is inherent to the clean interface, almostindependent of the interface geometry. On the contrary, cation substitution aswell as incorporation of electronegative impurities can compensate theintrinsic charge transfer and provide access to an exact adjustment of thesuperconductor-s doping. The effects of oxygen deficiency are discussed.



Author: U. Schwingenschloegl, C. Schuster

Source: https://arxiv.org/







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