Figure of merits of 28nm Si technologies for implementing laser attack resistant security dedicated circuitsReport as inadecuate




Figure of merits of 28nm Si technologies for implementing laser attack resistant security dedicated circuits - Download this document for free, or read online. Document in PDF available to download.

1 SAS-ENSMSE - Département Systèmes et Architectures Sécurisés 2 LIRMM - Laboratoire d-Informatique de Robotique et de Microélectronique de Montpellier 3 SysMIC - Conception et Test de Systèmes MICroélectroniques LIRMM - Laboratoire d-Informatique de Robotique et de Microélectronique de Montpellier

Abstract : Among all means to attack a security dedicated circuit, fault injection by means of laser illumination is a very efficient one. The laser beam creates electrons-holes pairs along its way through the silicon. The collection of these charges creates a transient current and thus may induce a fault in the circuit. Nevertheless the collection efficiency depends on various parameters including the technology used to implement the circuit. Here, up-to-date Bulk and Fully Depleted Silicon on Insulator FD-SOI 28nm technologies are compared in terms of sensitivity against laser injection. It comes out that FD-SOI structures show less sensitivity to laser injection and thus should be further explored for security dedicated circuits implementations.

Keywords : FDSOI hardware security laser fault injection





Author: Stephan De Castro - Jean-Max Dutertre - Giorgio Di Natale - Marie-Lise Flottes - Bruno Rouzeyre -

Source: https://hal.archives-ouvertes.fr/



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