Fabrication and electrical characterization of silicon nanowires based resistorsReport as inadecuate




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1 IETR - Institut d-Electronique et de Télécommunications de Rennes 2 IETR - Institut d-Electronique et de Télécommunications de Rennes

Abstract : Silicon nanowires SiNWs are synthesized via the Vapor-Liquid-Solid VLS mechanism using gold Au as metal catalyst and silane SiH4 as precursor gas. Au nanoparticles are employed as liquid droplets catalysis during the SiNWs growth performed in a hot wall LPCVD reactor at 480°C and 40 Pa. SiNWs local synthesis at micron scale is demonstrated using classical optical photolithography process. SiNWs grow with high density anchored at the dedicated catalyst islands. This resulting network is used to interconnect two heavily doped polysilicon interdigitated electrodes leading to the formation of electrical resistors in a coplanar structure. Current-voltage I-V characteristics highlight a symmetric shape. The temperature dependence of the electrical resistance is activated, with activation energy of 0.47 eV at temperatures greater than 300K.





Author: Liang Ni - Fouad Demami - Régis Rogel - Anne-Claire Salaün - Laurent Pichon -

Source: https://hal.archives-ouvertes.fr/



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