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Abstract: Monolithic CMOS pixel sensors offer unprecedented opportunities for fastnano-imaging through direct electron detection in transmission electronmicroscopy.
We present the design and a full characterisation of a CMOS pixeltest structure able to withstand doses in excess of 1 MRad.
Data collected withelectron beams at various energies of interest in electron microscopy arecompared to predictions of simulation and to 1.5 GeV electron data todisentagle the effect of multiple scattering.
The point spread functionmeasured with 300 keV electrons is 8.1 +- 1.6 micron for 10 micron pixel and10.9 +- 2.3 micron for 20 micron pixels, respectively, which agrees wellwith the values of 8.4 micron and 10.5 micron predicted by our simulation.



Author: Marco Battaglia, Devis Contarato, Peter Denes, Dionisio Doering, Piero Giubilato, Tae Sung Kim, Serena Mattiazzo, Velimir Radmilo

Source: https://arxiv.org/



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