A Low-Power Voltage Limiter-Regulator IC in Standard Thick-Oxide 130 nm CMOS for Inductive Power Transfer ApplicationReport as inadecuate




A Low-Power Voltage Limiter-Regulator IC in Standard Thick-Oxide 130 nm CMOS for Inductive Power Transfer Application - Download this document for free, or read online. Document in PDF available to download.

Advances in Power Electronics - Volume 2014 2014, Article ID 317523, 6 pages -

Research Article

Massey University, New Zealand

Center for Research in Analog & VLSI Microsystem dEsign CRAVE, School of Engineering and Advanced Technology SEAT, Massey University, Albany, Auckland 0632, New Zealand

Received 8 September 2014; Revised 1 December 2014; Accepted 4 December 2014; Published 18 December 2014

Academic Editor: C. M. Liaw

Copyright © 2014 Stepan Lapshev and S. M. Rezaul Hasan. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

This paper presents a novel CMOS low-power voltage limiter-regulator circuit with hysteresis for inductive power transfer in an implanted telemetry application. The circuit controls its rail voltage to the maximum value of 3 V DC employing 100 mV of comparator hysteresis. It occupies a silicon area of only 127 µm × 125 µm using the 130 nm IBM CMOS process. In addition, the circuit dissipated less than 1 mW and was designed using thick-oxide 3.6 V NMOS and PMOS devices available in the process library.





Author: Stepan Lapshev and S. M. Rezaul Hasan

Source: https://www.hindawi.com/



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