Effect of the nitrogen incorporation and fast carrier dynamics in In,GaAsN-GaP self-assembled quantum dotsReport as inadecuate




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1 FOTON - Fonctions Optiques pour les Technologies de l-informatiON 2 Tyndall National Institute Cork 3 INSA Toulouse - Institut National des Sciences Appliquées - Toulouse

Abstract : We report on the structural and optical properties of In,GaAsN self-assembled quantum dots grown on GaP 001 substrate. A comparison with nitrogen free In,GaAs system is presented, showing a clear modification of growth mechanisms and a significant shift of the photoluminescence spectrum. Low temperature carrier recombination dynamics is studied by time-resolved photoluminescence, highlighting a drastic reduction of the characteristic decay-time when nitrogen is incorporated in the quantum dots. Room temperature photoluminescence is observed at 840nm. These results reveal the potential of In,GaAsN as an efficient active medium monolithically integrated on Si for laser applications.

Keywords : quantum dots InGaAsN-GaP photonics on silicon carrier dynamics dilute nitride room temperature photoluminescence





Author: Jean-Philippe Gauthier - Cédric Robert - Samy Almosni - Yoan Léger - Mathieu Perrin - Jacky Even - Andrea Balocchi - Hélène C

Source: https://hal.archives-ouvertes.fr/



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