2D Monte Carlo Simulation of Hole and Electron Transport in Strained SiReport as inadecuate




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VLSI Design - Volume 6 1998, Issue 1-4, Pages 167-171

Center for Solid State Electronics Research, Arizona State University Tempe, 85287-6206, Az, USA



Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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Author: Gabriele F. Formicone, Dragica Vasileska, and David K. Ferry

Source: https://www.hindawi.com/



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