Surface Modification on the Sputtering-Deposited ZnO Layer for ZnO-Based Schottky DiodeReport as inadecuate




Surface Modification on the Sputtering-Deposited ZnO Layer for ZnO-Based Schottky Diode - Download this document for free, or read online. Document in PDF available to download.

Journal of NanomaterialsVolume 2013 2013, Article ID 560542, 9 pages

Research Article

Institute of Electro-Optical and Material Science, National Formosa University, Yunlin 63201, Taiwan

ITRI South, Industrial Technology Research Institute, Tainan 73445, Taiwan

Metal Industries Research and Development Centre, Kaohsiung 81160, Taiwan

Received 14 September 2013; Accepted 5 November 2013

Academic Editor: Liang-Wen Ji

Copyright © 2013 Ren-Hao Chang et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

We prepare a zinc oxide- ZnO- based Schottky diode constructed from the transparent cosputtered indium tin oxide- ITO- ZnO ohmic contact electrode and Ni-Au Schottky metal. After optimizing the ohmic contact property and removing the ion-bombardment damages using dilute HCl etching solution, the dilute hydrogen peroxide H2O2 and ammonium sulfide NH42Sx solutions, respectively, are employed to modify the undoped ZnO layer surface. Both of the Schottky barrier heights with the ZnO layer surface treated by these two solutions, evaluated from the current-voltage I-V and capacitance-voltage C-V measurements, are remarkably enhanced as compared to the untreated ZnO-based Schottky diode. Through the X-ray photoelectron spectroscopy XPS and room-temperature photoluminescence RTPL investigations, the compensation effect as evidence of the increases in the O–H and OZn acceptor defects appearing on the ZnO layer surface after treating by the dilute H2O2 solution is responsible for the improvement of the ZnO-based Schottky diode. By contrast, the enhancement on the Schottky barrier height for the ZnO layer surface treated by using dilute NH42Sx solution is attributed to both the passivation and compensation effects originating from the formation of the Zn–S chemical bond and acceptors.





Author: Ren-Hao Chang, Kai-Chao Yang, Tai-Hong Chen, Li-Wen Lai, Tsung-Hsin Lee, Shiau-Lu Yao, and Day-Shan Liu

Source: https://www.hindawi.com/



DOWNLOAD PDF




Related documents