Comparative Study of Statistical Distributions in Electromigration-Induced Failures of Al-Cu Thin-Film InterconnectsReport as inadecuate




Comparative Study of Statistical Distributions in Electromigration-Induced Failures of Al-Cu Thin-Film Interconnects - Download this document for free, or read online. Document in PDF available to download.

Active and Passive Electronic Components - Volume 16 1994, Issue 2, Pages 119-126

National Technical University of Athens, School of Electrical Engineering, Computer Science, Dept., Microelectronics Group, Zografou GR-157 73, Greece

Received 8 September 1993; Accepted 8 November 1993

Copyright © 1994 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

In electromigration failure studies, it is in general assumed that electromigration-induced failures maybe adequately modelled by a log-normal distribution. Further to this, it has been argued that a lognormaldistribution of failure times is indicative of electromigration mechanisms. We have combinedpost processing of existing life-data from Al-Cu + TiW bilayer interconnects with our own results fromAl-Cu interconnects to show that the Log Extreme Value distribution is an equally good statisticalmodel for electromigration failures, even in cases where grain size exceeds the linewidth. The significanceof such a modelling is particularly apparent in electromigration failure rate prediction.





Author: M. I. Loupis, J. N. Avaritsiotis, and G. D. Tziallas

Source: https://www.hindawi.com/



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