Geometric dephasing-limited Hanle effect in long-distance lateral silicon spin transport devices - Condensed Matter > Materials ScienceReport as inadecuate




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Abstract: Evidence of spin precession and dephasing -Hanle effect- induced by anexternal magnetic field is the only unequivocal proof of spin-polarizedconduction electron transport in semiconductor devices. However, when spindephasing is very strong, Hanle effect in a uniaxial magnetic field can beimpossible to measure. Using a Silicon device with lateral injector-detectorseparation over 2 millimeters, and geometrically-induced dephasing making spintransport completely incoherent, we show experimentally and theoretically thatHanle effect can still be measured using a two-axis magnetic field.



Author: Biqin Huang, Hyuk-Jae Jang, Ian Appelbaum

Source: https://arxiv.org/







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