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Abstract: We report results from two-dimensional Raman spectroscopy studies oflarge-area epitaxial graphene grown on SiC. Our work reveals unexpectedly largevariation in Raman peak position across the sample resulting from inhomogeneityin the strain of the graphene film, which we show to be correlated withphysical topography by coupling Raman spectroscopy with atomic forcemicroscopy. We report that essentially strain free graphene is possible evenfor epitaxial graphene.



Author: J. A. Robinson, C. P. Puls, N. E. Staley, J. Stitt, M.A. Fanton, K. V. Emtsev, T. Seyller, Y. Liu

Source: https://arxiv.org/







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