Geometrical structure of an iron epilayer on Si 111 : an X-ray standing wave analysisReport as inadecuate




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1 LMCP - Laboratoire de minéralogie, cristallographie de Paris

Abstract : The structure of an iron film, deposited at low temperature 50 °C upon a silicon 111 substrate, has been determined by means of X-ray Standing Wave experiments performed at LURE Orsay, France.
Experimental results are coherent with the model of an abrupt interface between the adsorbate and the surface : the first site of adsorption terminates the bulk silicon and a body-centred iron layer epitaxially grows on the substrate with a preferential growth orientation.


Keywords : x-ray standing wave interface





Author: Jean-Claude Boulliard - Bernard Capelle - Dominique Ferret - Alain Lifchitz - Cécile Malgrange - Jean-François Pétroff - Alain

Source: https://hal.archives-ouvertes.fr/



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