Contactless monitoring of the diameter-dependent conductivity of GaAs nanowiresReport as inadecuate




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Nano Research

, Volume 3, Issue 10, pp 706–713

First Online: 21 September 2010Received: 01 July 2010Revised: 12 August 2010Accepted: 12 August 2010DOI: 10.1007-s12274-010-0034-4

Cite this article as: Jabeen, F., Rubini, S., Martelli, F. et al. Nano Res. 2010 3: 706. doi:10.1007-s12274-010-0034-4

Abstract

Contactless monitoring with photoelectron microspectroscopy of the surface potential along individual nanostructures, created by the X-ray nanoprobe, opens exciting possibilities to examine quantitatively size- and surface-chemistry-effects on the electrical transport of semiconductor nanowires NWs. Implementing this novel approach-which combines surface chemical microanalysis with conductivity measurements-we explored the dependence of the electrical properties of undoped GaAs NWs on the NW width, temperature and surface chemistry. By following the evolution of the Ga 3d and As 3d core level spectra, we measured the position-dependent surface potential along the GaAs NWs as a function of NW diameter, decreasing from 120 to ?20 nm, and correlated the observed decrease of the conductivity with the monotonic reduction in the NW diameter from 120 to ~20 nm. Exposure of the GaAs NWs to oxygen ambient leads to a decrease in their conductivity by up to a factor of 10, attributed to the significant decrease in the carrier density associated with the formation of an oxide shell.Open image in new window

KeywordsSemiconductor nanowires charge transport surface oxidation photoelectron X-ray microscopy charging GaAs This article is published with open access at Springerlink.com

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Author: Fauzia Jabeen - Silvia Rubini - Faustino Martelli - Alfonso Franciosi - Andrei Kolmakov - Luca Gregoratti - Matteo Amati -

Source: https://link.springer.com/







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