Magnetoresistive effect in graphene nanoribbon due to magnetic field induced band gap modulation - Condensed Matter > Mesoscale and Nanoscale PhysicsReport as inadecuate




Magnetoresistive effect in graphene nanoribbon due to magnetic field induced band gap modulation - Condensed Matter > Mesoscale and Nanoscale Physics - Download this document for free, or read online. Document in PDF available to download.

Abstract: The electronic properties of armchair graphene nanoribbons AGNRs can besignificantly modified from semiconducting to metallic states, by applying auniform perpendicular magnetic field B-field. Here, we theoretically studythe bandgap modulation induced by a perpendicular B-field. The applied B-fieldcauses the lowest conduction subband and the top-most valence subband to movecloser to one another to form the n=0 Landau level. We exploit this effect torealize a device relevant MR modulation. Unlike in conventional spin-valves,this intrinsic MR effect is realized without the use of any ferromagneticleads. The AGNRs with number of dimers, Na=3p+1 p=1,2,3,

. show the mostpromising behavior for MR applications, with large conductance modulation andhence, high MR ratio at the optimal source-drain bias. However, the MR issuppressed at higher temperature due to the spread of the Fermi functiondistribution. We also investigate the importance of the source-drain bias inoptimizing the MR. Lastly, we show that edge roughness of AGNRs has theunexpected effect of improving the magnetic sensitivity of the device and thusincreasing the MR ratio.



Author: S. Bala Kumar, M. B. A. Jalil, S. G. Tan, Gengchiau Liang

Source: https://arxiv.org/







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