A breakthrough toward wafer-size epitaxial graphene transfer - Condensed Matter > Materials ScienceReport as inadecuate




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Abstract: The formation of graphene on any desirable substrate is extremely essentialfor the successful replacement of Si with graphene in all technologicalapplications in the beyond-CMOS era. Recently, we observed that a Ti layerformed on epitaxial graphene by electron-beam evaporation has the sufficientlylarge area of contact with the surface of epitaxial graphene for theexfoliation process to take place. We also observed that the exfoliated FLG onthe Ti layer can be easily transferred onto a SiO2-Si substrate. In this paper,we have proposed a new technique for transferring graphene having a large areaof several square mm from the graphitized vicinal SiC substrate. Ramanscattering spectroscopy and low-energy electron microscopy analysis haverevealed that we can transfer mono-layer and bi-layer graphene onto the SiO2-Sisubstrate by using the proposed transfer process. The initial size of epitaxialgraphene formed on the SiC substrate is the only limitation of the new transferprocess. The transfer process is expected to become an extremely importanttechnology that will mark the beginning of a new era in the field of grapheneelectronics.



Author: A. Hashimoto, H. Terasaki, K. Morita, H. Hibino, S. Tanaka

Source: https://arxiv.org/







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