Analysis and design of a high power, high gain SiGe BiCMOS output stage for Use in a millimeter-wave power amplifierReport as inadecuate




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(2014)2014 10th Conference on Ph.D. research in microelectronics and electronics (PRIME 2014). Mark abstract In this paper a high gain, high power output stage designed in a 250nm SiGe BiCMOS technology is presented. The used topology together with a discussion on the stability of the output stage is explained in detail. In order to increase the gain of the output stage and thus increases the attainable power added efficiency (PAE), positive feedback is used. Furthermore a formula predicting the input impedance of a common base transistor at high frequencies is deducted which explains and predicts the magnitude of the feedback mechanism. The output stage achieves a peak gain of 14.4dB at 31GHz with a maximum output power of 22dBm.

Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-5745160



Author: Ramses Pierco, Timothy De Keulenaer , Guy Torfs and Johan Bauwelinck

Source: https://biblio.ugent.be/publication/5745160



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