Control of intrinsic point defects in single crystal silicon and germanium growth from a meltReport as inadecuate




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(2014)The 7th Forum on the Science and Technology of Silicon Materials 2014.p.223-236 Mark

Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-5737732



Author: Jan Vanhellemont , E Kamiyama, K Nakamura and K Sueoka

Source: https://biblio.ugent.be/publication/5737732



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