Systematic investigation of influence of n-type doping on electron spin dephasing in CdTe - Condensed Matter > Materials ScienceReport as inadecuate




Systematic investigation of influence of n-type doping on electron spin dephasing in CdTe - Condensed Matter > Materials Science - Download this document for free, or read online. Document in PDF available to download.

Abstract: We used time-resolved Kerr rotation technique to study the electron spincoherence in a comprehensive set of bulk CdTe samples with variousconcentrations of electrons that were supplied by n-type doping. The electronspin coherence time of 40 ps was observed at temperature of 7 K in p-type CdTeand in n-type CdTe with a low concentration of electrons. The increase of theconcentration of electrons leads to a substantial prolongation of the spincoherence time, which can be as long as 2.5 ns at 7 K in optimally dopedsamples, and to a modification of the g factor of electrons. The influence ofthe concentration of electrons is the most pronounced at low temperatures butit has a sizable effect also at room temperature. The optimal concentration ofelectrons to achieve the longest spin coherence time is 17-times higher in CdTethan in GaAs and the maximal low-temperature value of the spin coherence timein CdTe is 70 times shorter than the corresponding value in GaAs. Our data canhelp in cross-checking the predictions of various theoretical models that weresuggested in literature as an explanation of the observed non-monotonous dopingdependence of the electron spin coherence time in GaAs.



Author: D. Sprinzl, P. Horodyska, E. Belas, R. Grill, P. Maly, P. Nemec

Source: https://arxiv.org/



DOWNLOAD PDF




Related documents