Spectroscopic investigation of quantum confinement effects in ion implanted silicon-on-sapphire films - Condensed Matter > Mesoscale and Nanoscale PhysicsReport as inadecuate




Spectroscopic investigation of quantum confinement effects in ion implanted silicon-on-sapphire films - Condensed Matter > Mesoscale and Nanoscale Physics - Download this document for free, or read online. Document in PDF available to download.

Abstract: Crystalline Silicon-on-Sapphire SOS films were implanted with boron B$^+$and phosphorous P$^+$ ions. Different samples, prepared by varying the iondose in the range $10^{14}$ to 5 x $10^{15}$ and ion energy in the range150-350 keV, were investigated by the Raman spectroscopy, photoluminescencePL spectroscopy and glancing angle x-ray diffraction GAXRD. The Ramanresults from dose dependent B$^+$ implanted samples show red-shifted andasymmetrically broadened Raman line-shape for B$^+$ dose greater than $10^{14}$ions cm$^{-2}$. The asymmetry and red shift in the Raman line-shape isexplained in terms of quantum confinement of phonons in silicon nanostructuresformed as a result of ion implantation. PL spectra shows size dependent visibleluminescence at $\sim$ 1.9 eV at room temperature, which confirms the presenceof silicon nanostructures. Raman studies on P$^+$ implanted samples were alsodone as a function of ion energy. The Raman results show an amorphous top SOSsurface for sample implanted with 150 keV P$^+$ ions of dose 5 x $10^{15}$ ionscm$^{-2}$. The nanostructures are formed when the P$^+$ energy is increased to350 keV by keeping the ion dose fixed. The GAXRD results show consistency withthe Raman results.



Author: Rajesh Kumar, H.S. Mavi, A.K. Shukla

Source: https://arxiv.org/



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