Energy dissipation in graphene field-effect transistors - Condensed Matter > Materials ScienceReport as inadecuate




Energy dissipation in graphene field-effect transistors - Condensed Matter > Materials Science - Download this document for free, or read online. Document in PDF available to download.

Abstract: We measure the temperature distribution in a biased single-layer graphenetransistor using Raman scattering microscopy of the 2D-phonon band. Peakoperating temperatures of 1050 K are reached in the middle of the graphenesheet at 210 KW cm^-2 of dissipated electric power. The metallic contacts actas heat sinks, but not in a dominant fashion. To explain the observedtemperature profile and heating rate, we have to include heat-flow from thegraphene to the gate oxide underneath, especially at elevated temperatures,where the graphene thermal conductivity is lowered due to umklapp scattering.Velocity saturation due to phonons with about 50 meV energy is inferred fromthe measured charge density via shifts in the Raman G-phonon band, suggestingthat remote scattering through field coupling by substrate polar surfacephonons increases the energy transfer to the substrate and at the same timelimits the high-bias electronic conduction of graphene.



Author: Marcus Freitag, Mathias Steiner, Yves Martin, Vasili Perebeinos, Zhihong Chen, James C. Tsang, Phaedon Avouris

Source: https://arxiv.org/



DOWNLOAD PDF




Related documents