Novel Concept of Gas Sensitivity Characterization of Materials Suited for Implementation in FET-Based Gas SensorsReport as inadecuate




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Nanoscale Research Letters

, 11:481

Nanostructures: Materials and Devices

Abstract

We propose a novel technique to investigate the gas sensitivity of materials for implementation in field-effect transistor-based gas sensors. Our technique is based on the measurement of the surface charge induced by gas species adsorption, using an electrometer. Platinum sensitivity to hydrogen diluted in synthetic air has been evaluated with the proposed charge measurement technique in the operation temperature range from 80 to 190 °C at constant H2 concentration of 4 % and for different concentrations ranging from 0.5 to 4 % at 130 °C.

KeywordsGas sensor Field-effect transistor Surface charge measurement Hydrogen detection Platinum AbbreviationsFETField-effect transistor

MFCMass flow controller

MOSFETMetal oxide semiconductor field-effect transistor

RTRoom temperature

SG-FETSuspended gate-field effect transistor

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Author: Yosri Ayadi - Lama Rahhal - Bertrand Vilquin - Céline Chevalier - Fabian Ambriz Vargas - Serge Ecoffey - Andreas Ruediger

Source: https://link.springer.com/







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