Patterned growth of carbon nanotubes over vertically aligned silicon nanowire bundles for achieving uniform field emissionReport as inadecuate




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Nanoscale Research Letters

, 9:540

2014 International Symposium on Next-Generation Electronics ISNE 2014

Abstract

A fabrication strategy is proposed to enable precise coverage of as-grown carbon nanotube CNT mats atop vertically aligned silicon nanowire VA-SiNW bundles in order to realize a uniform bundle array of CNT-SiNW heterojunctions over a large sample area. No obvious electrical degradation of as-fabricated SiNWs is observed according to the measured current-voltage characteristic of a two-terminal single-nanowire device. Bundle arrangement of CNT-SiNW heterojunctions is optimized to relax the electrostatic screening effect and to maximize the field enhancement factor. As a result, superior field emission performance and relatively stable emission current over 12 h is obtained. A bright and uniform fluorescent radiation is observed from CNT-SiNW-based field emitters regardless of its bundle periodicity, verifying the existence of high-density and efficient field emitters on the proposed CNT-SiNW bundle arrays.

KeywordsSilicon nanowire Carbon nanotube Metal-induced chemical etching Field emission Electrostatic screening effect Electronic supplementary materialThe online version of this article doi:10.1186-1556-276X-9-540 contains supplementary material, which is available to authorized users.

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Author: Yung-Jr Hung - Yung-Jui Huang - Hsuan-Chen Chang - Kuei-Yi Lee - San-Liang Lee

Source: https://link.springer.com/







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