Electroluminescence of ordered ZnO nanorod array-p-GaN light-emitting diodes with graphene current spreading layerReport as inadecuate




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Nanoscale Research Letters

, 9:630

First Online: 25 November 2014Received: 17 October 2014Accepted: 13 November 2014

Abstract

Ordered ZnO nanorod array-p-GaN heterojunction light-emitting diodes LEDs have been fabricated by introducing graphene as the current spreading layer, which exhibit improved electroluminescence performance by comparison to the LED using a conventional structure indium-tin-oxide as the current spreading layer. In addition, by adjusting the diameter of ZnO nanorod array in use, the light emission of the ZnO nanorod array-p-GaN heterojunction LEDs was enhanced further. This work has great potential applications in solid-state lighting, high performance optoelectronic devices, and so on.

PACS78.60.Fi; 85.60.Jb; 78.67.Lt; 81.10.Dn

KeywordsZinc oxide Nanorod array Light-emitting diodes Graphene AbbreviationsCVDChemical vapor deposition

ELElectroluminescence

LEDsLight-emitting diodes

ITOIndium-tin-oxide

NBENear-band edge

PLPhotoluminescence

PMMAPolymethylmethacrylate

PSPolystyrene

RIEReactive ion etching

RTRoom temperature

SEMScanning electron microscopy

SAMSelf-assembled monolayer

UVUltraviolet

XRDX-ray diffraction.

Electronic supplementary materialThe online version of this article doi:10.1186-1556-276X-9-630 contains supplementary material, which is available to authorized users.

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Author: Jing-Jing Dong - Hui-Ying Hao - Jie Xing - Zhen-Jun Fan - Zi-Li Zhang

Source: https://link.springer.com/







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