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Abstract: In this paper we review the theory of silicon nanowires. We focus onnanowires with diameters below 10 nm, where quantum effects become importantand the properties diverge significantly from those of bulk silicon. Thesewires can be efficiently treated within electronic structure simulation methodsand will be among the most important functional blocks of future nanoelectronicdevices. Firstly, we review the structural properties of silicon nanowires,emphasizing the close connection between the growth orientation, thecross-section and the bounding facets. Secondly, we discuss the electronicstructure of pristine and doped nanowires, which hold the ultimate key fortheir applicability in novel electronic devices. Finally, we review transportproperties where some of the most important limitations in the performances ofnanowire-based devices can lay. Many of the unique properties of these systemsare at the same time defying challenges and opportunities for greattechnological advances.



Author: Riccardo Rurali

Source: https://arxiv.org/



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