Structural and electrical properties of oxygen complexes in Cz and FZ silicon crystals implanted with carbon ionsReport as inadecuate




Structural and electrical properties of oxygen complexes in Cz and FZ silicon crystals implanted with carbon ions - Download this document for free, or read online. Document in PDF available to download.

Nanoscale Research Letters

, 9:693

Nanotechnology and Nanomaterials NANO-2014

Abstract

We present a comparative study of thermal donor TD center formation mechanisms as a result of carbon ion implantation into float zone FZ-Si and Czochralski Cz-Si silicon crystals. The kinetics of the TD center formation and transformation of their structure during annealing have been investigated. Also, the TD center formation takes place after additional oxygen implantation into FZ-Cz-Si, and an important role of recoil oxygen atoms from the screen oxide has been demonstrated for the FZ-Si case. Their concentration in the Si surface layer depends on the implantation dose and the screen oxide thickness, reaching up to values 10 to 10 cm, which is comparable with the oxygen concentration in Cz-Si. These oxygen atoms can lead to additional thermal donor centers generation, especially in the FZ-Si.

PACS34.50.Dy; 61.10.-i; 68.35.Dv

KeywordsSilicon Thermal donor Ion implantation Oxygen Carbon P-n junction Electronic supplementary materialThe online version of this article doi:10.1186-1556-276X-9-693 contains supplementary material, which is available to authorized users.

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Author: Boris Romanyuk - Victor Melnik - Valentin Popov - Vilik Babich - Vasyl Kladko - Olexandr Gudymenko - Volodimir Ilchenko - I

Source: https://link.springer.com/







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