Model and performance evaluation of field-effect transistors based on epitaxial graphene on SiC - Condensed Matter > Mesoscale and Nanoscale PhysicsReport as inadecuate




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Abstract: In view of the appreciable semiconducting gap of 0.26 eV observed in recentexperiments, epitaxial graphene on a SiC substrate seems a promising channelmaterial for FETs. Indeed, it is two-dimensional - and therefore does notrequire prohibitive lithography - and exhibits a wider gap than otheralternative options, such as bilayer graphene. Here we propose a model andassess the achievable performance of a nanoscale FET based on epitaxialgraphene on SiC, conducting an exploration of the design parameter space. Weshow that the current can be modulated by 4 orders of magnitude; for digitalapplications an Ion -Ioff ratio of 50 and a subthreshold slope of 145 mV-decadecan be obtained with a supply voltage of 0.25 V. This represents a significantprogress towards solid-state integration of graphene electronics, but not yetsufficient for digital applications.



Author: Martina Cheli, Paolo Michetti, Giuseppe Iannaccone

Source: https://arxiv.org/







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