Space electric field concentrated effect for Zr:SiO2 RRAM devices using porous SiO2 buffer layerReport as inadecuate




Space electric field concentrated effect for Zr:SiO2 RRAM devices using porous SiO2 buffer layer - Download this document for free, or read online. Document in PDF available to download.

Nanoscale Research Letters

, 8:523

First Online: 11 December 2013Received: 22 August 2013Accepted: 26 November 2013

Abstract

To improve the operation current lowing of the Zr:SiO2 RRAM devices, a space electric field concentrated effect established by the porous SiO2 buffer layer was investigated and found in this study. The resistive switching properties of the low-resistance state LRS and high-resistance state HRS in resistive random access memory RRAM devices for the single-layer Zr:SiO2 and bilayer Zr:SiO2-porous SiO2 thin films were analyzed and discussed. In addition, the original space charge limited current SCLC conduction mechanism in LRS and HRS of the RRAM devices using bilayer Zr:SiO2-porous SiO2 thin films was found. Finally, a space electric field concentrated effect in the bilayer Zr:SiO2-porous SiO2 RRAM devices was also explained and verified by the COMSOL Multiphysics simulation model.

KeywordsRRAM Porous SiO2 Space charge limited current Zr Electronic supplementary materialThe online version of this article doi:10.1186-1556-276X-8-523 contains supplementary material, which is available to authorized users.

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Author: Kuan-Chang Chang - Jen-wei Huang - Ting-Chang Chang - Tsung-Ming Tsai - Kai-Huang Chen - Tai-Fa Young - Jung-Hui Chen - Rui

Source: https://link.springer.com/







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