Bipolar resistive switching in amorphous titanium oxide thin films - Condensed Matter > Materials ScienceReport as inadecuate




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Abstract: Using isothermal and temperature-dependent electrical measurements, weinvestigated the resistive switching mechanism of amorphous titanium oxide thinfilms deposited by a plasma-enhanced atomic layer deposition method between twoaluminum electrodes. We found a bipolar resistive switching behavior in thehigh temperature region > 140 K, and two activation energies of shallowtraps, 0.055 eV and 0.126 eV in the ohmic current regime. We also proposed thatthe bipolar resistive switching of amorphous TiO2 thin films is governed by thetransition of conduction mode from a bulk-limited SCLC model Off state to aninterface-limited Schottky emission On state, generated by the ionic movementof oxygen vacancies.



Author: Hu Young Jeong, Jeong Yong Lee, Min-Ki Ryu, Sung-Yool Choi

Source: https://arxiv.org/







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