Growth and fabrication of InAs-GaSb type II superlattice mid-wavelength infrared photodetectorsReport as inadecuate




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Nanoscale Research Letters

, 6:635

First Online: 22 December 2011Received: 08 September 2011Accepted: 22 December 2011

Abstract

We report our recent work on the growth and fabrication of InAs-GaSb type II superlattice photodiode detectors. The superlattice consists of 9 monolayer InAs-12 monolayer GaSb in each period. Lattice mismatch between the GaSb substrate and the superlattice is 1.5 × 10. The full width at half maximum of the first-order satellite peak from X-ray diffraction is 28 arc sec. The P-I-N photodiodes in which the absorption regions I regions have 600 periods of superlattice show a 50% cutoff wavelength of 4.3 μm. The current responsivity was measured at 0.48 A-W from blackbody radiation. The peak detectivity of 1.75 × 10 cmHz-W and the quantum efficiency of 41% at 3.6 μm were obtained.

PACS: 85.60.-q; 85.60.Gz; 85.35.-Be.

KeywordsInAs-GaSb type II superlattice photodiodes infrared Electronic supplementary materialThe online version of this article doi:10.1186-1556-276X-6-635 contains supplementary material, which is available to authorized users.

Electronic supplementary materialThe online version of this article doi:10.1186-1556-276X-6-635 contains supplementary material, which is available to authorized users.

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Author: Jianxin Chen - Qingqing Xu - Yi Zhou - Jupeng Jin - Chun Lin - Li He

Source: https://link.springer.com/







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